参考文献

[1]佛郎哥·马洛贝蒂，安东尼·C.戴维斯.电路与系统简史[M].秦达飞，谢镔，译.北京：清华大学出版社，2018.

[2]约翰·奥顿.半导体的故事[M].姬扬，译.合肥：中国科学技术大学出版社，2015.

[3]SHARP H.CLAYTON.The Edison effect and its modern applications[J].Journal of the American Institute of Electrical Engineers, 1922, 41(1):68-78.

[4]JONES M.电子管放大器[M].薛国雄，译.北京：人民邮电出版社，2015.

[5]童永潮.我国水银整流器工业的发展概况和方向[J].高压电器，1959，3：10-11.

[6]徐德鸿，陈治明，李永东，等.现代电力电子学[M].北京：机械工业出版社，2017.

[7]TSUNENOBU K, JAMES A C.Fundamentals of silicon carbide technology:Growth, characterization, devices and applications[M].Singapore:Wiley & IEEE Press, 2014.

[8]SHE X, HUANG A Q, LUCIA O, et al.Review of silicon carbide power devices and their applications[J].IEEE Transactions on Industrial Electronics, 2017, 64(10):8193-8205.

[9]MILLAN J, GODIGNON P, PERPINA X, et al.A survey of wide bandgap power semiconductor devices[J].IEEE Transactions on Power Electronics, 2014, 29(5):2155-2163.

[10]JONES E A, WANG F F, COSTINETT D.Review of commercial GaN power devices and GaN-based converter design challenges[J].IEEE Journal of Emerging and Selected Topics in Power Electronics, 2016, 4(3):707-719.

[11]GUGGENHEIM R,RODES L.Roadmap review for cooling high-power GaN HEMT devices[C/OL]//2017 IEEE International Conference on Microwaves,Antennas,Communications and Electronic Systems (COMCAS),Tel Aviv,Israel,2017:1-6.

[12]COOPER J A, MELLOCH M R, SINGH R, et al.Status and prospects for SiC power MOSFETs[J].IEEE Transactions on Electron Devices, 2002, 49(4):658-664.

[13]秦海鸿，谢昊天，朱梓悦，等.宽禁带器件驱动电路原理分析与设计[M].北京：北京航空航天大学出版社，2021.

[14]BUSCH G.Early history of the physics and chemistry of semiconductors-from doubts to fact in a hundred years[J].European Journal of Physics, 1989, 10(4):254-263.

[15]王凡生，刘繁，汪建华，等.金刚石半导体器件的研究进展[J].武汉工程大学学报，2020，42（05）：518-525.

[16]邵靖宇.硅字的来历和变迁[J].中国科技术语，2008，10（1）：46-48. rgS7JxFMI+WtznTxakkJrsVpxyebAKHQT74GhFRk0JUL1YpeUnyb9nyHKpkt3A2j