参考文献

[1] MURUGESAN M，MORI K，NAKAMURA A，et al. High Aspect Ratio TSV Formation by Using Low-Cost，Electroless-Ni as Barrier and Seed Layers for 3D-LSI Integration and Packaging Applications[C]. Solid State Devices and Materials（SSDM），2020.

[2] NIMBALKAR P，LIU F，WATANABE A，et al. Fabrication and reliability demonstration of 5μm redistribution layer using low-stress dielectric dry film[C].2020 IEEE 70th Electronic Components and Technology Conference（ECTC），2020：62-67.

[3] FU Z，ZHOU B，YAO R，et al. Research on thermal-electric coupling effect of the copper pillar bump in the flip chip packaging[C].2016 17th International Conference on Electronic Packaging Technology（ICEPT），2016：1377-1380.

[4] MARIAPPAN M，KOYANAGI M，FUKUSHIMA T. Impact of Electroless-Ni Seed Layer on Cu-Bottom-up Electroplating in High Aspect Ratio（＞10）TSVs for 3D-IC Packaging Applications[C].2020 IEEE 70th Electronic Components and Technology Conference（ECTC），2020：1736-1741.

[5] HWANG G，KALAISELVAN R. Development of TSV electroplating process for via-last technology [C].2017 IEEE 67th Electronic Components and Technology Conference（ECTC），2017：67-72.

[6] LIY，WANGH，LIY，et al. Simulation and Thermal Fatigue Analysis for Board Level BGA Connection of HTCC Packaging[C].2020 21st International Conference on Electronic Packaging Technology（ICEPT），2020：1-5.

[7] 电子封装技术丛书编委会汇编，王先春，贾松良执笔.集成电路封装试验手册[M].北京：电子工业出版社，1998.

[8] 翁建城，何小琦，周斌，等.一种计算对流空气条件下MCM器件结温的方法[J].广东工业大学学报，2014，31（4）：6.

[9] 中国电子技术标准化研究院.微电子器件试验方法和程序：GJB548B-2005[S].2005.

[10] JEDEC Moisture/Reflow Sensitivity Classification for Nonhermetic Surface Mount Devices：JEDEC J-STD-020E-2014[S].JEDEC Solid State Technology Association，2014.

[11] EBARA M，YAMADA K，KOJIMA K，et al. Threshold Dependence of Soft-Errors induced byαparticles and Heavy Ions on Flip Flops in a 65 nm Thin BOX FDSOI[C].2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference（S3S），2018：1-3.

[12] SAITO A，NISHIKAWA H，Tin Whisker Growth Mechanism on Tin Plating of MLCCs Mounted with Sn-3.5Ag-8In-0.5Bi Solder in 30℃/60%RH[C].2019 22nd European Microelectronics and Packaging Conference&Exhibition（EMPC），2019：1-4.

[13] ZHOU B，ZHANG Z，LI Y，et al. Flexible，robust，and multifunctional electromagnetic interference shielding film with alternating cellulose nanofiber and MXene layers[J]. ACS applied materials interfaces，2020，12（4）：4895-4905.

[14] SAITO A，NISHIKAWA H. Tin Whisker Growth Mechanism on Tin Plating of MLCCs Mounted with Sn-3.5Ag-8In-0.5Bi Solder in 30℃/60%RH[C].2019 22nd European Microelectronics and Packaging Conference&Exhibition（EMPC），2019：1-4.

[15] LEE B Z，LEE D N. Spontaneous growth mechanism of tin whiskers[J]. Acta Metallurgica，1998，46（10）：3701-3714.

[16] 何小琦，恩云飞，宋芳芳.电子微组装可靠性设计（基础篇）[M].北京：电子工业出版社，2020.

[17] 恩云飞，谢少锋，何小琦.可靠性物理[M].北京：电子工业出版社，2015.

[18] JEDEC. Test Method for Measuring Whisker Growth on Tin and Tin Alloy Surface Finishes：JEDEC JESD22-A121A-2008[S].JEDEC Soild State Technology Association，2008.

[19] JEDEC. Current Tin Whisker Theory and Mitigation Practices Guideline：JP002[S].JEDEC Solid State Technology Association，2006.

[20] JEDEC. Environmental Acceptance Requirements for Tin Whisker Susceptibility of Tin and Tin Alloy Surface Finishes：JESD201A[S].JEDEC Solid State Technology Association，2020.

[21] 中国电子技术标准化研究院.电子设备可靠性预计手册：GJB/Z 299C-2006[S].2006.

[22] Airbus France. Reliability methodology for electronic systems[Z].FIDES Group，2010. KCKJqJeVlIj2KAe2rfpPjoHA6BSC/FYwlxr+4EqqeMEvs60Rg6Z2MXFAqHQDRLbU