参考文献

[1]　BYRNES,JAMES.Unexploded ordnance detection and mitigation[M].Berlin:Springer Group,2009∶21-22.

[2]　何力，杨定江，倪国强.先进焦平面技术导论[M].北京：国防工业出版社，2011.

[3]　ROGALSKI A.HgCdTe infrared detector material:history,status and outlook [J].Reports on Progress in Physics,2005,68（10）∶2267.

[4]　ROGALSKI A,CHRZANOWSKI K.Infrared devices and techniques [J].Metrology & Measurement Systems,2014,21（4）∶565-618.

[5]　STARR B,MEARS L,FULK C.RVS Large Format Arrays for Astronomy [C].SPIE,2016∶99152X.

[6]　VECCHIO P L,WONG K,PARODOS T,et al.Advances in liquid phase epitaxial growth of Hg _{1- x} Cd _x Te for SWIR through VLWIR photodiodes [C].SPIE,2004∶65.

[7]　BENSON J D,FARRELL S,BRILL G,et al.Dislocation analysis in（112）B HgCdTe/CdTe/Si [J].Journal of Electronic Materials,2011,40（8）∶1847- 1853.

[8]　LEI W,REN Y L,MADNI I,et al.Low dislocation density MBE process for CdTe-on-GaSb as an alternative substrate for HgCdTe growth [J].Infrared Physics & Technology,2018（92）∶96-102.

[9]　JACOBS R N,STOLTZ A J,BENSON J D,et al.Analysis of mesa dislocation gettering in HgCdTe/CdTe/Si（211）by scanning transmission electron microscopy [J].Journal of Electronic Materials,2013,42（11）∶3148-3155.

[10]　ZHANG W T,CHEN X,YE Z H.A study on the surface correction of large format infrared detectors [J].Semiconductor Science Technology,2020（35）∶125007.

[11]　BENSON J D,BUBULAC L O,SMITH P J,et al.Growth and analysis of HgCdTe on alternate substrates [J].Journal of Electronic Materials,2012,41（10）∶2971-2974.

[12]　BADANO G,ROBIN I C,AMSTATT B,et al.Reduction of the dislocation density in molecular beam epitaxial CdTe（211）B on Ge（211）[J].Journal of Crystal Growth,2010,312（10）∶1721-1725.

[13]　WENISCH J,EICH D,LUTZ H,et al.MBE growth of MCT on GaAs substrates at AIM [J].Journal of Electronic Materials,2012,41（10）∶2828- 2832.

[14]　SONG P Y,YE Z H,HUANG A B,et al.Dark current characterization of SW HgCdTe IRFPAs detectors on Si substrate with long time integration [J].Journal of Electronic Materials,2016,45（9）∶4711-4715.

[15]　LEI W,GU R J,ANTOSZEWSKI J,et al.GaSb:A new alternative substrate for epitaxial growth of HgCdTe [J].Journal of Electronic Materials,2014,43（8）∶2788-2794.

[16]　REDDY M,JIN X,LOFGREEN D D,et al.Demonstration of high-quality MBE HgCdTe on 8 inch wafers [J].Journal of Electronic Materials,2019,48（10）∶6040-6044.

[17]　YE Z,YIN W,HUANG J B,et al.Low-roughness plasma etching of HgCdTe masked with patterned silicon dioxide [J].Journal of Electronic Materials,2011,40（8）∶1642-1646.

[18]　HU W D,CHEN X S,YE Z H,et al.A hybrid surface passivation on HgCdTe long wave infrared detector with in-situ CdTe deposition and high-density hydrogen plasma modification [J].Applied Physics Letters,2011,99（9）∶91-101.

[19]　崔爱梁，孙常鸿，叶振华.原子层沉积原理及在碲镉汞红外探测器中的应用展望[C].2019年红外遥感技术与应用研讨会暨交叉学科论坛，2019∶7.

[20]　LI Y,YE Z Y,HU W D,et al.Numerical simulation of Refractive- microlensed HgCdTe infrared focal plane arrays operating in optical systems [J].Journal of Electronic Materials,2014,43（8）∶2879-2887.

[21]　LI Y,YE Z H,LIN C,et al.Crosstalk suppressing design of GaAs microlenses integrated on HgCdTe infrared focal plane array [J].Optical and Quantum Electronics,2013,45（7）∶665-672.

[22]　CUI A L,LIU L F,SUN C H,et al.Analysis of dark current generated by long-wave infrared HgCdTe photodiodes with different implantation shapes [J].Infrared Physics & Technology,2019（103）∶103036.

[23]　BISOTTO S,ABERGEL J,DUPONT B,et al.7.5μm and 5μm pitch IRFPA developments in MWIR at CEA-LETI [C].SPIE,2019∶299.

[24]　SHKEDY L,ARMON E,AVNON E,et al.Hot MWIR detector with 5μm pitch [C].SPIE,2021∶117410W.

[25]　ARMSTRONG J M,SKOKAN M R,KINCH M A,et al.HDVIP five- micron pitch HgCdTe focal plane arrays [C].SPIE,2014∶907033.

[26]　KING D F,RADFORD W A,PATEN E A,et al.3" generation 1280×720 FPA development status at Raytheon Vision Systems [C].SPIE,2006∶62060W.

[27]　TIDROW M Z,DYER W R.Infrared sensors for ballistic missile defense [J].Infrared Physics & Technology,2001,42（3/5）∶333-336.

[28]　REINE M B,KRUEGER E E,O'DETTE P,et al.Photovoltaic HgCdTe detectors for advance GOES instruments [C].SPIE,1996∶501.

[29]　REINEM B,TOBINS P,NORTON P W,et al.Very long wavelength（>15μm）HgCdTe photodiodes by liquid phase epitaxy [C].SPIE,2004∶54.

[30]　HARUYOSHI K,MAKOTO H,SEICHI S.Development status of T2SL infrared detector in JAXA [C].SPIE,2021∶117410V.

[31]　REIBEL Y,PERE-LAPERNE N,AUGEY T,et al.Getting small,new 10μm pixel pitch cooled infrared products [C].SPIE,2014∶907034.

[32]　JO Y M,WOO D H,KANG S G,et al.Very wide dynamic range ROIC with pixel-level ADC for SWIR FPAs [J].IEEE Sensors Journal,2016,16（19）∶7227-7233.

[33]　REIBEL Y,ESPUNO L,TAALAT R,et al.High performance infrared fast cooled detectors for missile applications [C].SPIE,2016∶98190I.

[34]　叶振华，李辉豪，王进东，等.红外光电探测器的前沿热点与变革趋势[J].红外与毫米波学报，2022,41（1）∶15-36.

[35]　BAKER I,MAXEY C,HIPWOOD L,et al.Leonardo infrared sensors for astronomy:present and future [C].SPIE,2016∶991505.

[36]　ATKINSON D,HALL D,GOEBEL S,et al.Observatory deployment and characterization of SAPHIRA HgCdTe APD arrays [C].SPIE,2018∶107091H.

[37]　ROTHMANJ J,BORNIOL E D,GRAVRAND O,et al.MCT APD focal plane arrays for astronomy at CEA-LETI [C].SPIE,2016∶99150B.

[38]　ROTHMAN J,BORNIOL E D,ABERGEL J,et al.HgCdTe APDs for low photon number IR detection [C].SPIE,2017∶1011119.

[39]　LANTHERMANN C,ANUGU N,BOUQUIN J B,et al.Modeling the e-APD SAPHIRA/C-RED ONE camera at low flux level [J].A&A,2019（A38）∶625.

[40]　BAILEY S,MCKEAG W,WANG J X,et al.Advances in HgCdTe APDs and LADAR receivers [C].SPIE,2010∶76603I.

[41]　DESTéFanis G,TRIBOLET P,VUILLERMET M,et al.MCT IR detectors in France [C].SPIE:801235.

[42]　ALAIN M,LAURENT R,YANN R,et al.Improved IR detectors to swap heavy systems for SWaP [C].SPIE,2012∶835334.

[43]　BREITER R,EICH D,FIGGEMEIER H,et al.Optimized MCT IR-modules for high- performance imaging applications [C].SPIE,2014∶90702V.

[44]　LEE D,CARMODY M,PIQUETTE E,et al.High-operating temperature HgCdTe:a vision for the near future [J].Electronic Mater,2016,45（9）∶4587-4595.

[45]　ROLLIN B V,SIMMONS E L.Long wavelength infra red photoconductivity of silicon at low temperatures [J].Proceedings of the Physical Society,Section B,1952,65（12）∶995-996.

[46]　KLIPSTEIN P.XBn barrier photodetectors for high sensitivity and high operating temperature infrared sensors [C].SPIE,2008∶69402U. nFdx4WBY/NLwP7dcG5OhZoUKmVCFqUt2L8cG0HTTgp3gmaAnallGCxJXmBsco/aW